Investigation of AlAsxSb1-x III-V Ternary Semiconductor Band Energy Gap

Abstract: AlAsxSb1-x III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds AlAs and AlSb by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the AlAsxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Keywords: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical polarizability.

Introduction: 1) In this opening talk of AlAsxSb1-x III-V Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg

2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties.

3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology.

4) In the present work, the solid solutions belonging to AlAsxSb1-x III-V Ternary Semiconductor Band Energy Gap have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro Negativity of these materials.

5) Recently no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds.

6) Doping of As component in a Binary semiconductor like AlSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

7) Thus effect of do pant increases the conductivity and decreases the Band Energy Gap and finds extensive applications

8) The present investigation relates Band Energy Gap and Electro Negativity with variation of composition for AlAsxSb1-x III-V Ternary Semiconductor.

9) The fair agreement between calculated and reported values of Band Energy Gaps of AlAs and AlAsb Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors.

10) The present work opens new line of approach to Band Energy Gap studies in AlAsxSb1-x III-V Ternary Semiconductor

Objective: The main Objective of this paper is to calculate AlAsxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Purpose: The purpose of study is AlAsxSb1-x III-V Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of III-V Ternary Semiconductors to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of III-V ternary semiconductors and Band Energy Gap values in composition range (0 Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1+2*f12)]POWER (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12 Electro Negativity values of Elemental Semiconductors:

Compound Al Ga As In P Sb N E.N value 1.5 1.8 2 1.7 2.1 1.9 3

Electro Negativity values of AlAsxSb1-x III-V Ternary Semiconductor

X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5

Compound AlAsxSb1-x XM value 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 XN value 1 1.06629 1.101065 1.136974 1.174055 1.212345 1.251883 1.292711 1.33487 1.378405 (XM/XN)2 2.25 1.978936 1.855908 1.740528 1.632322 1.530842 1.435671 1.346417 1.262712 1.184211

(XM-XN)2 0.25 0.188104 0.159149 0.131788 0.10624 0.082746 0.061562 0.042969 0.027268 0.014785 2(XM-XN)2 1.189207 1.139266 1.116628 1.09565 1.076419 1.059032 1.043595 1.030232 1.01908 1.010301 (2(XM-XN)2)1/4 1.044274 1.033133 1.027962 1.0231 1.018581 1.014442 1.010725 1.007474 1.004736 1.002565 28.8/(2(XM-XN)2)1/4 27.57897 27.87637 28.01659 28.14975 28.27464 28.38999 28.4944 28.58635 28.66424 28.72631

ALPHA-M 105.41 103.1168 101.9702 100.8236 99.677 98.5304 97.3838 96.2372 95.0906 93.944 RO-VALUES 4.22 4.179 4.1585 4.138 4.1175 4.097 4.0765 4.056 4.0355 4.015 M-VALUES 148.74 144.056 141.714 139.372 137.03 134.688 132.346 130.004 127.662 125.32 ALPHA-M*RO/M 2.990656 2.991372 2.992245 2.993485 2.995111 2.997142 2.9996 3.002508 3.005891 3.009776

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 7.54E+24 7.54E+24 7.55E+24 7.55E+24 7.55E+24 7.56E+24 7.56E+24 7.57E+24 7.58E+24 7.59E+24 1-(4PIN/3)*ALPHAM*RO/M 7.54E+24 7.54E+24 7.55E+24 7.55E+24 7.55E+24 7.56E+24 7.56E+24 7.57E+24 7.58E+24 7.59E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.51E+25 1.51E+25 1.51E+25 1.51E+25 1.51E+25 1.51E+25 1.51E+25 1.51E+25 1.52E+25 1.52E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 13.78949 13.93819 14.0083 14.07487 14.13732 14.195 14.2472 14.29318 14.33212 14.36315

Eg value 366.4235 183.7855 134.1485 99.74706 75.46908 58.04128 45.32901 35.91577 28.84609 23.46537

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0

Compound XM value 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 XN value 1.423359 1.469779 1.517714 1.567211 1.618323 1.671102 1.725602 1.781879 1.839992 1.9 (XM/XN)2 1.110589 1.041545 0.976794 0.916068 0.859117 0.805706 0.755616 0.708641 0.664585 0.623269

(XM-XN)2 0.005874 0.000913 0.000314 0.004517 0.014 0.029276 0.050896 0.079456 0.115595 0.16 2(XM-XN)2 1.00408 1.000633 1.000218 1.003136 1.009752 1.0205 1.035908 1.056619 1.083421 1.117287 (2(XM-XN)2)1/4 1.001018 1.000158 1.000054 1.000783 1.002429 1.005086 1.008859 1.013864 1.020233 1.028114 28.8/(2(XM-XN)2)1/4 28.7707 28.79544 28.79843 28.77746 28.73021 28.65426 28.54711 28.40618 28.22885 28.01246

ALPHA-M 92.7974 91.6508 90.5042 89.3576 88.211 87.0644 85.9178 84.7712 83.6246 82.478 RO-VALUES 3.9945 3.974 3.9535 3.933 3.9125 3.892 3.8715 3.851 3.8305 3.81 M-VALUES 122.978 120.636 118.294 115.952 113.61 111.268 108.296 106.584 104.242 101.9 ALPHA-M*RO/M 3.014191 3.019167 3.024738 3.030939 3.03781 3.045392 3.071496 3.062879 3.072888 3.083819

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 7.6E+24 7.61E+24 7.63E+24 7.64E+24 7.66E+24 7.68E+24 7.75E+24 7.72E+24 7.75E+24 7.78E+24 1-(4PIN/3)*ALPHAM*RO/M 7.6E+24 7.61E+24 7.63E+24 7.64E+24 7.66E+24 7.68E+24 7.75E+24 7.72E+24 7.75E+24 7.78E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.52E+25 1.52E+25 1.53E+25 1.53E+25 1.53E+25 1.54E+25 1.55E+25 1.54E+25 1.55E+25 1.56E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.38535 14.39772 14.39922 14.38873 14.36511 14.32713 14.27356 14.20309 14.11442 14.00623

Eg value 19.31854 16.08479 13.53499 11.50342 9.868775 8.541316 7.453899 6.555794 5.808301 5.181627

Doping of As component in a Binary semiconductor like AlSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

Future Plans: 1) Current data set of Electro Negativity values of AlAsxSb1-x III-V Ternary Semiconductors and Band Energy Gap values include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future.

2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion: 1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications.

2) Limited theoretical work on Electro Negativity values and Band Energy Gap of AlAsxSb1-x III-V Ternary Semiconductors with in the Composition range of (0 3) Our results regarding the Electro Negativity values and Band Energy Gap of III-V Ternary Semiconductors are found to be in reasonable agreement with the experimental data

Results and Discussion: Electro Negativity values of Ternary Semiconductors are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors and Band Energy Gap is used for Electrical conduction of semiconductors. This phenomenon is used in Band Gap Engineering.

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

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