Study of InPxAs1-x III-V Ternary Semiconductor Band Energy Gap

Abstract: InPxAs1-x III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the InPxAs1-x III-V Ternary Semiconductor Band Energy Gap values

Keywords: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical polarizability.

Introduction: 1) In this opening talk of InPxAs1-x III-V Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg 2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties. 3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology. 4) In the present work, the solid solutions belonging to InPxAs1-x III-V Ternary Semiconductor Band Energy Gap have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro Negativity of these materials. 5) Recently no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds. 6) Doping of P component in a Binary semiconductor like InAs and changing the composition of do pant has actually resulted in lowering of Band Energy Gap. 7) Thus effect of do pant increases the conductivity and decreases the Band Energy Gap and finds extensive applications 8) The present investigation relates Band Energy Gap and Electro Negativity with variation of composition for InPxAs1-x III-V Ternary Semiconductor. 9) The fair agreement between calculated and reported values of Band Energy Gaps of InP and InAsb Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors. 10) The present work opens new line of approach to Band Energy Gap studies in InPxAs1-x III-V Ternary Semiconductor

Objective: The main Objective of this paper is to calculate InPxAs1-x III-V Ternary Semiconductor Band Energy Gap values

Purpose: The purpose of study is InPxAs1-x III-V Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of III-V Ternary Semiconductors to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of III-V ternary semiconductors and Band Energy Gap values in composition range (0 Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1+2*f12)]POWER (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12 Electro Negativity values of Elemental Semiconductors:

Compound Al Ga As In P Sb N E.N value 1.5 1.8 2 1.7 2.1 1.9 3

Electro Negativity values of InPxAs1-x III-V Ternary Semiconductor

X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound InPxAs1-x XM value 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 XN value 2 2.009782 2.014691 2.019612 2.024544 2.029489 2.034446 2.039415 2.044397 2.04939 (XM/XN)2 0.7225 0.715484 0.712002 0.708536 0.705088 0.701656 0.698241 0.694843 0.691461 0.688095 (XM-XN)2 0.09 0.095965 0.09903 0.102152 0.105329 0.108563 0.111854 0.115203 0.118609 0.122073

2(XM-XN)2 1.06437 1.06878 1.071053 1.073373 1.07574 1.078154 1.080616 1.083127 1.085688 1.088298 (2(XM-XN)2)1/4 1.015718 1.016768 1.017309 1.017859 1.01842 1.018991 1.019572 1.020164 1.020766 1.021379 28.8/(2(XM-XN)2)1/4 28.35432 28.32503 28.30999 28.29468 28.27911 28.26326 28.24715 28.23076 28.2141 28.19717

ALPHA-M 104.90 103.444 102.716 101.988 101.26 100.532 99.804 99.076 98.348 97.62 RO-VALUES 5.66 5.573 5.5295 5.486 5.4425 5.399 5.3555 5.312 5.2685 5.225 M-VALUES 189.74 185.345 183.1475 180.95 178.7525 176.555 174.3575 172.16 169.9625 167.765 ALPHA-M*RO/M 3.129198 3.11038 3.101151 3.092048 3.083076 3.074239 3.065542 3.056992 3.048593 3.040351

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 7.89E+24 7.84E+24 7.82E+24 7.8E+24 7.77E+24 7.75E+24 7.73E+24 7.71E+24 7.69E+24 7.67E+24

1-(4PIN/3)*ALPHAM*RO/M 7.89E+24 7.84E+24 7.82E+24 7.8E+24 7.77E+24 7.75E+24 7.73E+24 7.71E+24 7.69E+24 7.67E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.58E+25 1.57E+25 1.56E+25 1.56E+25 1.55E+25 1.55E+25 1.55E+25 1.54E+25 1.54E+25 1.53E+25 1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.17716 14.16252 14.155 14.14734 14.13955 14.13163 14.12357 14.11538 14.10705 14.09859

Eg value 6.7924 6.662277 6.598569 6.535742 6.473783 6.412677 6.352409 6.292966 6.234333 6.176497

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0

Compound XM value 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 XN value 2.054396 2.059414 2.064444 2.069486 2.074541 2.079608 2.084687 2.089779 2.094883 2.1 (XM/XN)2 0.684746 0.681413 0.678097 0.674797 0.671512 0.668244 0.664991 0.661755 0.658534 0.655329

(XM-XN)2 0.125596 0.129178 0.132819 0.13652 0.140281 0.144102 0.147984 0.151928 0.155933 0.16 2(XM-XN)2 1.090959 1.09367 1.096434 1.09925 1.10212 1.105043 1.10802 1.111053 1.114142 1.117287 (2(XM-XN)2)1/4 1.022003 1.022637 1.023283 1.023939 1.024607 1.025285 1.025975 1.026677 1.027389 1.028114 28.8/(2(XM-XN)2)1/4 28.17996 28.16248 28.14471 28.12667 28.10835 28.08974 28.07085 28.05167 28.03221 28.01246

ALPHA-M 96.892 96.164 95.436 94.708 93.98 93.252 92.524 91.796 91.068 90.34 RO-VALUES 5.1815 5.138 5.0945 5.051 5.0075 4.964 4.9205 4.877 4.8335 4.79 M-VALUES 165.5675 163.37 161.1725 158.975 156.7775 154.58 152.3825 105.185 147.9875 145.79 ALPHA-M*RO/M 3.032273 3.024366 3.016636 3.00909 3.001737 2.994585 2.987642 4.256207 2.974421 2.968164

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 7.65E+24 7.63E+24 7.61E+24 7.59E+24 7.57E+24 7.55E+24 7.53E+24 1.07E+25 7.5E+24 7.48E+24

1-(4PIN/3)*ALPHAM*RO/M 7.65E+24 7.63E+24 7.61E+24 7.59E+24 7.57E+24 7.55E+24 7.53E+24 1.07E+25 7.5E+24 7.48E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.53E+25 1.53E+25 1.52E+25 1.52E+25 1.51E+25 1.51E+25 1.51E+25 2.15E+25 1.5E+25 1.5E+25 1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.08998 14.08124 14.07236 14.06334 14.05417 14.04487 14.03543 14.02584 14.01611 14.00623

Eg value 6.119445 6.063164 6.007641 5.952865 5.898822 5.8455 5.792888 5.740975 5.689749 5.639198

Doping of P component in a Binary semiconductor like InAs and changing the composition of do pant has actually resulted in lowering of Band Energy Gap. Future Plans: 1) Current data set of Electro Negativity values of InPxAs1-x III-V Ternary Semiconductors and Band Energy Gap values include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion: 1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications. 2) Limited theoretical work on Electro Negativity values and Band Energy Gap of InPxAs1-x III-V Ternary Semiconductors with in the Composition range of (0 Results and Discussion: Electro Negativity values of Ternary Semiconductors are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors and Band Energy Gap is used for Electrical conduction of semiconductors. This phenomenon is used in Band Gap Engineering.

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

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