Calculation of AlxIn1-xSb III-V Ternary Semiconductor Band Energy Gap

Abstract: AlxIn1-xSb III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds AlSb and InSb by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the AlxIn1-xSb III-V Ternary Semiconductor Band Energy Gap values

Keywords: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical polarizability.

Introduction: 1) In this opening talk of AlxIn1-xSb III-V Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg 2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties. 3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology. 4) In the present work, the solid solutions belonging to AlxIn1-xSb III-V Ternary Semiconductor Band Energy Gap have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro Negativity of these materials. 5) Recently no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds. 6) Doping of Al component in a Binary semiconductor like InSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap. 7) Thus effect of do pant increases the conductivity and decreases the Band Energy Gap and finds extensive applications 8) The present investigation relates Band Energy Gap and Electro Negativity with variation of composition for AlxIn1-xSb III-V Ternary Semiconductor. 9) The fair agreement between calculated and reported values of Band Energy Gaps of AlSb and InSb Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors. 10) The present work opens new line of approach to Band Energy Gap studies in AlxIn1-xSb III-V Ternary Semiconductor

Objective: The main Objective of this paper is to calculate AlxIn1-xSb III-V Ternary Semiconductor Band Energy Gap values

Purpose: The purpose of study is AlxIn1-xSb III-V Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of III-V Ternary Semiconductors to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of III-V ternary semiconductors and Band Energy Gap values in composition range (0 Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1+2*f12)]POWER (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12 Electro Negativity values of Elemental Semiconductors:

Compound Al Ga As In P Sb N E.N value 1.5 1.8 2 1.7 2.1 1.9 3

Electro Negativity values of AlxIn1-xSb III-V Ternary Semiconductor

X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound AlxIn1-xSb XM value1.7 1.678855 1.668381 1.65797 1.6476293 1.63735 1.627136 1.616984 1.606896754 1.596872 XN value1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9

(XM/XN)2 0.800554 0.780763 0.771051 0.76146 0.7519896 0.742636 0.733399 0.724277 0.715267916 0.706371 (XM-XN)20.04 0.048905 0.053647 0.05858 0.063691 0.068985 0.074455 0.080098 0.085909513 0.091887 2(XM-XN)2 1.0281138 1.03448 1.037886 1.04144 1.0451362 1.048978 1.052963 1.05709 1.061356638 1.065763

(2(XM-XN)2)1/4 1.0069556 1.008511 1.00934 1.0102 1.0110979 1.012026 1.012986 1.013977 1.014998347 1.01605 28.8/(2(XM-XN)2)1/4 28.601064 28.55696 28.53351 28.5091 28.483888 28.45777 28.43081 28.40302 28.37443044 28.34506

ALPHA-M 134.69 131.762 130.298 128.834 127.37 125.906 124.442 122.978 121.514 120.05 RO-VALUES 5.77 5.615 5.5375 5.46 5.3825 5.305 5.2275 5.15 5.0725 4.995 M-VALUES 236.58 227.796 223.404 219.012 214.62 210.228 205.836 201.444 197.052 192.66 ALPHA-M*RO/M3.2849831 3.247834 3.229688 3.21185 3.1943389 3.177176 3.160383 3.143984 3.128005628 3.112477

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 8.284E+24 8.19E+24 8.14E+24 8.1E+24 8.055E+24 8.01E+24 7.97E+24 7.93E+24 7.88767E+24 7.85E+24 1-(4PIN/3)*ALPHAM*RO/M 8.284E+24 8.19E+24 8.14E+24 8.1E+24 8.055E+24 8.01E+24 7.97E+24 7.93E+24 7.88767E+24 7.85E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.657E+25 1.64E+25 1.63E+25 1.6E+25 1.611E+25 1.6E+25 1.59E+25 1.59E+25 1.57753E+25 1.57E+25

1-phi12/1+2*phi120.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12)14.300532 14.27848 14.26675 14.2546 14.241944 14.22888 14.2154 14.20151 14.18721522 14.17253

Eg value8.4124373 7.971366 7.763258 7.56294 7.3700773 7.18433 7.005391 6.832963 6.666763958 6.506527

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0

XM value1.58691 1.57701 1.567171 1.557394 1.547678 1.538023 1.528428 1.518892 1.509417 1.5 XN value1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 (XM/XN)2 0.697585 0.688908 0.680339 0.671877 0.66352 0.655267 0.647117 0.639068 0.631119 0.623269 XM-XN -0.31309 -0.32299 -0.33283 -0.34261 -0.35232 -0.36198 -0.37157 -0.38111 -0.39058 -0.4 2(XM-XN)21.070308 1.07499 1.079808 1.084762 1.089851 1.095073 1.100429 1.105917 1.111537 1.117287

(2(XM-XN)2)1/4 1.017132 1.018242 1.019381 1.020548 1.021743 1.022965 1.024214 1.025488 1.026788 1.028114 28.8/(2(XM-XN)2)1/4 28.31492 28.28404 28.25243 28.22012 28.18712 28.15345 28.11914 28.08419 28.04862 28.01246

ALPHA-M 118.586 117.122 115.658 114.194 112.73 111.266 109.802 108.338 106.874 105.41 RO-VALUES 4.9175 4.84 4.7625 4.685 4.6075 4.53 4.4525 4.375 4.2975 4.22 M-VALUES 188.268 183.876 179.484 175.092 170.7 166.308 161.916 157.524 153.132 148.74 ALPHA-M*RO/M3.097428 3.082895 3.068915 3.05553 3.042785 3.030732 3.019426 3.00893 2.999314 2.990656

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 7.81E+24 7.77E+24 7.74E+24 7.7E+24 7.67E+24 7.64E+24 7.61E+24 7.59E+24 7.56E+24 7.54E+24 1-(4PIN/3)*ALPHAM*RO/M 7.81E+24 7.77E+24 7.74E+24 7.7E+24 7.67E+24 7.64E+24 7.61E+24 7.59E+24 7.56E+24 7.54E+24

1+2*(4PIN/3)*ALPHAM*RO/M 1.56E+25 1.55E+25 1.55E+25 1.54E+25 1.53E+25 1.53E+25 1.52E+25 1.52E+25 1.51E+25 1.51E+25 1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.15746 14.14202 14.12622 14.11006 14.09356 14.07673 14.05957 14.04209 14.02431 14.00623

Eg value6.351996 6.202931 6.059098 5.92028 5.786267 5.65686 5.531869 5.411113 5.294421 5.181627

Doping of Al component in a Binary semiconductor like InSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

Future Plans: 1) Current data set of Electro Negativity values of AlxIn1-xSb III-V Ternary Semiconductors and Band Energy Gap values include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion: 1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications. 2) Limited theoretical work on Electro Negativity values and Band Energy Gap of AlxIn1-xSb III-V Ternary Semiconductors with in the Composition range of (0 Results and Discussion: Electro Negativity values of Ternary Semiconductors are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors and Band Energy Gap is used for Electrical conduction of semiconductors. This phenomenon is used in Band Gap Engineering.

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

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