Study of InxGa1-xSb III-V Ternary Semiconductor Band Energy Gap

Abstract: InxGa1-xSb III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the InxGa1-xSb III-V Ternary Semiconductor Band Energy Gap values

Keywords: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical polarizability.

Introduction: 1) In this opening talk of InxGa1-xSb III-V Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg 2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties. 3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology. 4) In the present work, the solid solutions belonging to InxGa1-xSb III-V Ternary Semiconductor Band Energy Gap have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro Negativity of these materials. 5) Recently no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds. 6) Doping of In component in a Binary semiconductor like GaSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap. 7) Thus effect of do pant increases the conductivity and decreases the Band Energy Gap and finds extensive applications 8) The present investigation relates Band Energy Gap and Electro Negativity with variation of composition for InxGa1-xSb III-V Ternary Semiconductor. 9) The fair agreement between calculated and reported values of Band Energy Gaps of InSb and GaSb Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors. 10) The present work opens new line of approach to Band Energy Gap studies in InxGa1-xSb III-V Ternary Semiconductor

Objective: The main Objective of this paper is to calculate InxGa1-xSb III-V Ternary Semiconductor Band Energy Gap values

Purpose: The purpose of study is InxGa1-xSb III-V Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of III-V Ternary Semiconductors to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of III-V ternary semiconductors and Band Energy Gap values in composition range (0 Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1+2*f12)]POWER (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12 Electro Negativity values of Elemental Semiconductors:

Compound Al Ga As In P Sb N E.N value 1.5 1.8 2 1.7 2.1 1.9 3

Electro Negativity values of InxGa1-xSb III-V Ternary Semiconductor

X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound InxGa1-xSb XM value1.8 1.789741 1.784633 1.77954 1.774462 1.769398 1.764348 1.759313 1.754292 1.749286 XN value 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 (XM/XN)2 0.897506925 0.887305 0.882248 0.87722 0.87222 0.867249 0.862306 0.857391 0.852504 0.847645 (XM-XN)2 0.01 0.012157 0.013309 0.014511 0.01576 0.017057 0.018401 0.019793 0.021231 0.022715 2(XM-XN)2 1.00695555 1.008462 1.009268 1.010109 1.010984 1.011893 1.012837 1.013814 1.014825 1.015869

(2(XM-XN)2)1/4 1.00173437 1.002109 1.002309 1.002518 1.002735 1.00296 1.003194 1.003436 1.003686 1.003944 28.8/(2(XM-XN)2)1/4 28.75013662 28.73939 28.73365 28.72767 28.72146 28.715 28.70831 28.70139 28.69424 28.68686

ALPHA-M 110.32 113 114 115 116 118 119 120 121 123 RO-VALUES 5.619 5.636 5.644 5.652 5.66 5.668 5.676 5.684 5.692 5.7 M-VALUES 191.48 196 198 201 203 205 207 210 212 214 ALPHA-M*RO/M 3.237351577 3.249327 3.249576 3.233731 3.234286 3.262556 3.263014 3.248 3.248736 3.276168 TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 8.1634E+24 8.19E+24 8.19E+24 8.15E+24 8.16E+24 8.23E+24 8.23E+24 8.19E+24 8.19E+24 8.26E+24 1-(4PIN/3)*ALPHAM*RO/M 8.1634E+24 8.19E+24 8.19E+24 8.15E+24 8.16E+24 8.23E+24 8.23E+24 8.19E+24 8.19E+24 8.26E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.63268E+25 1.64E+25 1.64E+25 1.63E+25 1.63E+25 1.65E+25 1.65E+25 1.64E+25 1.64E+25 1.65E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-pi12/1+2*pi12) 14.37506831 14.3697 14.36683 14.36384 14.36073 14.3575 14.35416 14.35069 14.34712 14.34343

Eg values10.93862962 10.64166 10.49734 10.35572 10.21674 10.08034 9.946459 9.815049 9.686054 9.559422

Compound XM value1.744293 1.739315 1.734352 1.729402 1.724467 1.719545 1.714638 1.709745 1.704865 1.7 XN value1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 (XM/XN)2 0.842814 0.838011 0.833234 0.828485 0.823763 0.819068 0.8144 0.809758 0.805143 0.800554 (XM-XN)20.024245 0.02582 0.027439 0.029104 0.030812 0.032564 0.034359 0.036197 0.038078 0.04

2(XM-XN)2 1.016947 1.018058 1.019202 1.020378 1.021587 1.022828 1.024102 1.025407 1.026745 1.028114 (2(XM-XN)2)1/4 1.00421 1.004484 1.004766 1.005056 1.005354 1.005659 1.005972 1.006292 1.00662 1.006956 28.8/(2(XM-XN)2)1/4 28.67926 28.67143 28.66338 28.65512 28.64664 28.63794 28.62904 28.61992 28.61059 28.60106

ALPHA-M 124 125 126 127 129 130 131 132 133 134.691 RO-VALUES 5.708 5.716 5.724 5.732 5.74 5.748 5.756 5.764 5.772 5.78 M-VALUES 216 219 221 223 225 228 230 232 234 236.58 ALPHA-M*RO/M 3.276815 3.262557 3.263457 3.264413 3.290933 3.277368 3.278417 3.279517 3.280667 3.290701

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 (4PIN/3)*ALPHAM*RO/M 8.26E+24 8.23E+24 8.23E+24 8.23E+24 8.3E+24 8.26E+24 8.27E+24 8.27E+24 8.27E+24 8.3E+24 1-(4PIN/3)*ALPHAM*RO/M 8.26E+24 8.23E+24 8.23E+24 8.23E+24 8.3E+24 8.26E+24 8.27E+24 8.27E+24 8.27E+24 8.3E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.65E+25 1.65E+25 1.65E+25 1.65E+25 1.66E+25 1.65E+25 1.65E+25 1.65E+25 1.65E+25 1.66E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.33963 14.33572 14.33169 14.32756 14.32332 14.31897 14.31452 14.30996 14.3053 14.30053

Eg value9.435102 9.313045 9.193201 9.075523 8.959965 8.846483 8.735031 8.625567 8.51805 8.412437

Doping of In component in a Binary semiconductor like GaSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

Future Plans: 1) Current data set of Electro Negativity values of InxGa1-xSb III-V Ternary Semiconductors and Band Energy Gap values include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion: 1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications. 2) Limited theoretical work on Electro Negativity values and Band Energy Gap of InxGa1-xSb III-V Ternary Semiconductors with in the Composition range of (0 Results and Discussion: Electro Negativity values of Ternary Semiconductors are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors and Band Energy Gap is used for Electrical conduction of semiconductors. This phenomenon is used in Band Gap Engineering.

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

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