InAsxSb1-x III-V Ternary Semiconductor Band Energy Gap

Abstract: InAsxSb1-x III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the InAsxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Keywords: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical polarizability.

Introduction: 1) In this opening talk of InAsxSb1-x III-V Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg 2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties. 3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology. 4) In the present work, the solid solutions belonging to InAsxSb1-x III-V Ternary Semiconductor Band Energy Gap have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro Negativity of these materials. 5) Recently no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds. 6) Doping of As component in a Binary semiconductor like InSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap. 7) Thus effect of do pant increases the conductivity and decreases the Band Energy Gap and finds extensive applications 8) The present investigation relates Band Energy Gap and Electro Negativity with variation of composition for InAsxSb1-x III-V Ternary Semiconductor. 9) The fair agreement between calculated and reported values of Band Energy Gaps of InAs and InSb Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors. 10) The present work opens new line of approach to Band Energy Gap studies in InAsxSb1-x III-V Ternary Semiconductor

Objective: The main Objective of this paper is to calculate InAsxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Purpose: The purpose of study is InAsxSb1-x III-V Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of III-V Ternary Semiconductors to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of III-V ternary semiconductors and Band Energy Gap values in composition range (0 Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1+2*f12)]POWER (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12 Electro Negativity values of Elemental Semiconductors:

Compound Al Ga As In P Sb N E.N value 1.5 1.8 2 1.7 2.1 1.9 3

Electro Negativity values of InAsxSb1-x III-V Ternary Semiconductor

X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound InAsxSb1-x XM value 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 XN value 1.9 1.909771 1.914675 1.919592 1.924521 1.929463 1.934418 1.939386 1.944366 1.949359 (XM/XN)2 0.800554017 0.792383 0.788329 0.784296 0.780284 0.776291 0.77232 0.768368 0.764437 0.760526 2(XM-XN)2 1.028113827 1.030971 1.03246 1.033989 1.035559 1.037171 1.038824 1.040521 1.04226 1.044042 (2(XM-XN)2)1/4 1.00695555 1.007654 1.008018 1.008391 1.008774 1.009166 1.009568 1.00998 1.010401 1.010833 28.8/(2(XM-XN)2)1/4 28.60106387 28.58123 28.57092 28.56035 28.54952 28.53842 28.52706 28.51542 28.50352 28.49135

ALPHA-M 134.69 132 130 129 127 126 124 123 121 120 RO-VALUES 5.775 5.768 5.762 5.756 5.75 5.744 5.738 5.726 5.726 5.72 M-VALUES 236.58 232 230 227 225 223 220 218 216 213 ALPHA-M*RO/M 3.287829698 3.281793 3.256783 3.271031 3.245556 3.245489 3.234145 3.230725 3.20762 3.222535

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 8.29069E+24 8.28E+24 8.21E+24 8.25E+24 8.18E+24 8.18E+24 8.16E+24 8.15E+24 8.09E+24 8.13E+24

1-(4PIN/3)*ALPHAM*RO/M 8.29069E+24 8.28E+24 8.21E+24 8.25E+24 8.18E+24 8.18E+24 8.16E+24 8.15E+24 8.09E+24 8.13E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.65814E+25 1.66E+25 1.64E+25 1.65E+25 1.64E+25 1.64E+25 1.63E+25 1.63E+25 1.62E+25 1.63E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-pi12/1+2*pi12) 14.30053193 14.29061 14.28546 14.28018 14.27476 14.26921 14.26353 14.25771 14.25176 14.24567

Eg values 8.412437255 8.227031 8.13649 8.047353 7.959596 7.873191 7.788114 7.704341 7.621846 7.540606

Compound XM value1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 XN value1.954365 1.959383 1.964415 1.96946 1.974517 1.979588 1.984671 1.989768 1.994877 2 (XM/XN)2 0.756635 0.752764 0.748913 0.745081 0.741269 0.737477 0.733704 0.72995 0.726215 0.7225 (XM-XN)2 0.064701 0.06728 0.069915 0.072608 0.07536 0.078169 0.081038 0.083965 0.086953 0.09

2(XM-XN)21.045868 1.047739 1.049655 1.051616 1.053624 1.055678 1.057779 1.059927 1.062124 1.06437 (2(XM-XN)2)1/4 1.011275 1.011727 1.012189 1.012662 1.013144 1.013638 1.014142 1.014656 1.015182 1.015718 28.8/(2(XM-XN)2)1/4 28.4789 28.46618 28.45318 28.43991 28.42635 28.41251 28.3984 28.38399 28.3693 28.35432

ALPHA-M 118 117 115 114 112 111 109 108 106 104.9 RO-VALUES 5.714 5.698 5.692 5.686 5.686 5.684 5.678 5.672 5.666 5.66 M-VALUES 211 208 206 204 201 199 197 194 192 189.74 ALPHA-M *RO 674.252 666.666 654.58 648.204 636.832 630.924 618.902 612.576 600.596 593.734 ALPHA-M*RO/M 3.195507 3.205125 3.177573 3.177471 3.168318 3.170472 3.141635 3.157608 3.128104 3.129198

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 8.06E+24 8.08E+24 8.01E+24 8.01E+24 7.99E+24 7.99E+24 7.92E+24 7.96E+24 7.89E+24 7.89E+24 1-(4PIN/3)*ALPHAM*RO/M 8.06E+24 8.08E+24 8.01E+24 8.01E+24 7.99E+24 7.99E+24 7.92E+24 7.96E+24 7.89E+24 7.89E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.61E+25 1.62E+25 1.6E+25 1.6E+25 1.6E+25 1.6E+25 1.58E+25 1.59E+25 1.58E+25 1.58E+25 1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.23945 14.23309 14.22659 14.21995 14.21318 14.20626 14.1992 14.192 14.18465 14.17716

Eg value7.460599 7.381801 7.304191 7.227746 7.152446 7.07827 7.005197 6.933207 6.862281 6.7924

Doping of As component in a Binary semiconductor like InSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

Future Plans: 1) Current data set of Electro Negativity values of InAsxSb1-x III-V Ternary Semiconductors and Band Energy Gap values include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion: 1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications. 2) Limited theoretical work on Electro Negativity values and Band Energy Gap of InAsxSb1-x III-V Ternary Semiconductors with in the Composition range of (0 Results and Discussion: Electro Negativity values of Ternary Semiconductors are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors and Band Energy Gap is used for Electrical conduction of semiconductors. This phenomenon is used in Band Gap Engineering.

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

References: 1) IUPAC Gold Book internet edition: "Electronegativity". 2) Pauling, L. (1932). "The Nature of the Chemical Bond. IV. The Energy of Single Bonds and the Relative Electronegativity of Atoms". Journal of the American Chemical Society 54 (9): 3570–3582.. 3) Pauling, Linus (1960). Nature of the Chemical Bond. Cornell University Press. pp. 88–107. ISBN 0801403332 . 4) Greenwood, N. N.; Earnshaw, A. (1984). Chemistry of the Elements. Pergamon. p. 30. ISBN 0-08-022057-6. 5) Allred, A. L. (1961). "Electronegativity values from thermochemical data". Journal of Inorganic and Nuclear Chemistry 17 (3–4): 215–221.. 6) Mulliken, R. S. (1934). "A New Electroaffinity Scale; Together with Data on Valence States and on Valence Ionization Potentials and Electron Affinities". Journal of Chemical Physics 2: 782–793.. 7) Mulliken, R. S. (1935). "Electronic Structures of Molecules XI. Electroaffinity, Molecular Orbitals and Dipole Moments". J. Chem. Phys. 3: 573–585.. 8) Pearson, R. G. (1985). "Absolute electronegativity and absolute hardness of Lewis acids and bases". J. Am. Chem. Soc. 107: 6801.. 9) Huheey, J. E. (1978). Inorganic Chemistry (2nd Edn.). New York: Harper & Row. p. 167. 10) Allred, A. L.; Rochow, E. G. (1958). "A scale of electronegativity based on electrostatic force". Journal of Inorganic and Nuclear Chemistry 5: 264.. 11) Prasada rao., K., Hussain, O.Md., Reddy, K.T.R., Reddy, P.S., Uthana, S., Naidu, B.S. and Reddy, P.J., Optical Materials, 5, 63-68 (1996). 12) Ghosh, D.K., Samantha, L.K. and Bhar, G.C., Pramana, 23(4), 485 (1984). 13) CRC Handbook of Physics and Chemistry, 76th edition. 14) Sanderson, R. T. (1983). "Electronegativity and bond energy". Journal of the American Chemical Society 105: 2259 15) Murthy, Y.S., Naidu, B.S. and Reddy, P.J., “Material Science &Engineering,”B38, 175 (1991)

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