|
Investigation of dopants on Structural Properties of Ternary Semi conductors V. Rama Murthy & Alla. Srivani Research Scholar Rayalaseema university P.G Department of Physics, T.J.P.S College Guntur-6 A.P India Abstract: Lattice constants of the III-V Ternary compounds also tend to be different, causes defects in amounts dependent on the mismatch magnitude; this influences the ratio of achievable radiative/nonradiative recombinations and determines the luminous efficiency of the device. Some of these materials are tunable by alloying multiple compound semiconductors in band gap or Lattice constant. Keywords: Lattice constant, concentration, III-V Ternary Compounds Introduction: 1)In the large family of III-V ternary compounds one could expect to find systematic trends for the Physical properties like Lattice constant. 2)In this opening talk of these III-V Ternary Semi conducting Compounds I would like first describe Influence of Concentration on Lattice constant of III-V Ternary Semiconductors. 3)I will then discuss several points related with the structural Properties of these ternary compounds. I will show that very simple questions have not yet received satisfactory answers and emphasize some problems, which remain unsolved. 4)There exist a number of ternary III–V and II–VI systems, where the lattice parameters of the constituent Binary compounds straddle the lattice parameter of silicon. 5)Lattice-matched solid solutions of these materials emerge from the large number of pseudo ternary containing hypothetical compositions that match the lattice parameter of silicon on the basis of Vegard’s law. 6)Lattice constant, defines distance between atoms in cubic-cell crystals. 7)III-V compound semiconductor materials generally have a zinc blend structure, which is made up out of two face centered cubic units cells, displaced over a quarter diagonal. Many of these Compounds have direct band gap and hence a non-phonon assisted optical transition is possible. The resulting high optical transition probability is of utmost importance for device applications in optical communications. 8)The lattice constants and the band gap energy of the ternary compounds can be obtained from the Binary constituents by Vegard’s law. 9)In the last two or three decades the researcher's interest in III-V Ternary semiconductors is growing up dramatically. There are several reasons for this, but the more significant are their multiple applications on one hand and their special and different properties, in comparison with conventional semiconductors. 10)The examples of these III-V Ternary compounds are some of the more characteristic. In a lot of cases these semiconductors have to be doped because of device's or application's demands. But then the properties of these materials, and especially their Structural properties, are affected, mainly, by the site occupancy of impurities Objective: The main objective of this paper is to show variation of Lattice constant with composition (x) in 23 different III-V Ternary Semi conducting Compounds. Purpose: The purpose of study is effect of composition in Lattice constant of 23 III-V Ternary Semi conducting Compounds to represent additivity principle even in very low composition range. Theoretical Impact: 1)III-V Ternary Semi conducting compounds represents substitution pseudo binary alloys. There have been numerous experimental studies of the Structural properties of III-V Ternary Semi conducting compounds. These experimental Studies have mostly been limited to the reflectance or absorption spectroscopy in the narrow spectral range. 2)An excellent agreement with the experimental data is obtained for the entire investigated spectral region and for all compositions 3)The properties of III-V Ternary Semi conducting compounds is in additive nature if solute composition is less than solvent composition. 4)The main aim of modeling the Structural properties of a ternary alloy is to make the calculation of the physical constants for compositions with no available experimental data possible. 5)In this paper we present a method that can accurately and reliably determine the Lattice constant as a function of composition (x). 6)If the dependence of the physical constants on the alloy composition is known, spectroscopic ellipsometry can be used to monitor the alloy composition. 7)The first approach of this paper is to determine the physical parameters for particular compositions and then to find the physical function describing the dependence of the physical parameters on the alloy Composition (x). 8)The second approach of this paper is to simultaneously fit in the data sets for all available compositions in order to minimize the discrepancies between the calculated and the experimental Data over the entire composition range. Lattice costant of Binary Compounds: Compound AlN AlP AlAs AlSb GaN GaP GaAs GaSb InN InP InAs InSb L.C a=3.112 5.451 5.662 6.134 a=3.189 5.4512 5.653 6.096 a=3.540 5.869 6.058 6.479 c=4.982 c=5.186 c=5.703 Lattice costant of Ternary Compounds: 1) AlxGa1-xAs = AlAs + GaAs Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlxGa1-xAs = AlAs + GaAs x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.653 5.654 5.654 5.6548 5.6553 5.656 5.656 5.657 5.657 5.658 Compound AlxGa1-xAs x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.658 5.6584 5.6589 5.6593 5.6598 5.6602 5.6607 5.6611 5.6616 5.662 2) InxGa1-xAs Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound InxGa1-xAs = InAs + GaAs x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.653 5.694 5.714 5.734 5.7543 5.775 5.795 5.815 5.835 5.856 Compound InxGa1-xAs x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.876 5.896 5.916 5.937 5.957 5.98 5.997 6.018 6.038 6.06 3) InxGa1-xP Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound InxGa1-xP = InP + GaP x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.451 5.493 5.514 5.5346 5.5555 5.576 5.597 5.618 5.639 5.66 Compound InxGa1-xP x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.681 5.702 5.723 5.744 5.765 5.79 5.806 5.827 5.848 5.87 4) AlxIn1-xAs Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlxIn1-xAs = AlAs + InAs x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.058 6.018 5.999 5.9788 5.959 5.939 5.919 5.9 5.88 5.86 compound AlxIn1-xAs x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.84 5.82 5.801 5.781 5.761 5.74 5.721 5.702 5.682 5.66 5) AlxIn1-x Sb Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlxIn1-x Sb = AlSb + InSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.479 6.445 6.427 6.41 6.3928 6.376 6.358 6.341 6.324 6.307 Compound AlxIn1-x Sb x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 6.289 6.272 6.255 6.238 6.22 6.2 6.186 6.169 6.151 6.13 6) GaAsxN1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound GaAsxN1-x = GaAs + GaN x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.186 5.233 5.256 5.2794 5.3028 5.326 5.349 5.373 5.396 5.42 Compound GaAsxN1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.443 5.466 5.49 5.513 5.536 5.56 5.583 5.606 5.63 5.65 7) GaAsxP1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound GaAsxP1-x = GaAs + GaP x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.451 5.471 5.481 5.4914 5.5015 5.512 5.522 5.532 5.542 5.552 Compound GaAsxP1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.562 5.572 5.582 5.592 5.603 5.61 5.623 5.633 5.643 5.65 8) AlxGa1-x N Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlxGa1-x N = AlN + GaN x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.186 5.166 5.155 5.1452 5.135 5.125 5.115 5.104 5.094 5.084 Compound AlxGa1-x N x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.074 5.064 5.053 5.043 5.033 5.02 5.013 5.002 4.992 4.98 9) InxGa1-x N Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound InxGa1-x N = InN + GaN x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.186 5.238 5.264 5.2894 5.3153 5.341 5.367 5.393 5.419 5.445 Compound InxGa1-x N x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.47 5.496 5.522 5.548 5.574 5.6 5.625 5.651 5.677 5.7 10) InAsxSb1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound InAsxSb1-x = InAs + InSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.479 6.437 6.416 6.3948 6.3738 6.353 6.332 6.311 6.29 6.269 Compound InAsxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 6.247 6.226 6.205 6.184 6.163 6.14 6.121 6.1 6.079 6.06 11) InxGa1-x Sb Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound InxGa1-x Sb = InSb + GaSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.096 6.134 6.153 6.1726 6.1918 6.211 6.23 6.249 6.268 6.288 Compound InxGa1-x Sb x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 6.307 6.326 6.345 6.364 6.383 6.4 6.422 6.441 6.46 6.48 12) AlxIn1-x P Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlxIn1-x P = AlP + InP x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.869 5.827 5.806 5.7854 5.7645 5.744 5.723 5.702 5.681 5.66 Compound AlxIn1-x P x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.639 5.618 5.597 5.576 5.556 5.53 5.514 5.493 5.472 5.45 13) AlxGa1-x Sb Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlxGa1-x Sb = AlSb + GaSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.096 6.1 6.102 6.1036 6.1055 6.107 6.109 6.111 6.113 6.115 Compound AlxGa1-x Sb x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 6.117 6.119 6.121 6.123 6.125 6.13 6.128 6.13 6.132 6.13 14) GaAsxSb1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound GaAsxSb1-x = GaAs + GaSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.096 6.052 6.03 6.0074 5.9853 5.963 5.941 5.919 5.897 5.875 Compound GaAsxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.852 5.83 5.808 5.786 5.764 5.74 5.719 5.697 5.675 5.65 15) InAsxN1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound InAsxN1-x = InAs + InN x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.703 5.739 5.756 5.774 5.7918 5.81 5.827 5.845 5.863 5.881 Compound InAsxN1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.898 5.916 5.934 5.952 5.969 5.99 6.005 6.023 6.04 6.06 16) InPxAs1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound InPxAs1-x = InP + InAs x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.058 6.039 6.03 6.0202 6.0108 6.001 5.992 5.982 5.973 5.964 Compound InPxAs1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.954 5.945 5.935 5.926 5.916 5.91 5.897 5.888 5.878 5.87 17) AlAsxSb1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlAsxSb1-x = AlAs + AlSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.134 6.087 6.063 6.0396 6.016 5.992 5.969 5.945 5.922 5.898 Compound AlAsxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.874 5.851 5.827 5.804 5.78 5.76 5.733 5.709 5.686 5.66 18) AlAsxP1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlAsxP1-x = AlAs + AlP x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.451 5.472 5.483 5.4932 5.5038 5.514 5.525 5.535 5.546 5.557 Compound AlAsxP1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.567 5.578 5.588 5.599 5.609 5.62 5.63 5.641 5.651 5.66 19) GaPxSb1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound GaPxSb1-x = GaP + GaSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.096 6.032 5.999 5.967 5.9348 5.903 5.87 5.838 5.806 5.774 Compound GaPxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.741 5.709 5.677 5.645 5.612 5.58 5.548 5.516 5.483 5.45 20) InPxSb1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound InPxSb1-x = InP + InSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.479 6.418 6.388 6.357 6.3265 6.296 6.266 6.235 6.205 6.174 Compound InPxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 6.144 6.113 6.083 6.052 6.022 5.99 5.961 5.93 5.9 5.87 21) AlPxSb1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlPxSb1-x = AlP + AlSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 6.134 6.066 6.032 5.9974 5.9633 5.929 5.895 5.861 5.827 5.793 Compound AlPxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.758 5.724 5.69 5.656 5.622 5.59 5.553 5.519 5.485 5.45 22) AlxIn1-x N Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound AlxIn1-x N = AlN + InN x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.703 5.631 5.595 5.5588 5.5228 5.487 5.451 5.415 5.379 5.343 Compound AlxIn1-x N x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.306 5.27 5.234 5.198 5.162 5.13 5.09 5.054 5.018 4.98 23) GaPxN1-x Relation: The lattice constant a12 can be expressed as a12=a1*x +a2*(1-x) Where: 1) a1=Lattice constant of first Binary compound 2) a2=Lattice constant of second Binary compound x=Composition Compound GaPxN1-x = GaP + GaN x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a12 5.186 5.213 5.226 5.239 5.2523 5.266 5.279 5.292 5.305 5.319 Compound GaPxN1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 a12 5.332 5.345 5.358 5.372 5.385 5.4 5.411 5.425 5.438 5.45 Variation of Lattice constant (a12) with composition (x) is given. It has been observed that Lattice constant (a12) increase for compounds (x=0.0-1.0) with the increase of composition. Future Plans: 1) Current data set to include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance. Conclusion: This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of Dependence of Lattice constant (a12) in III-V Ternary Semiconductors On Composition. The semiconductors have been carried out because of computational complexities and difficulties associate with disorder in the alloys. Polycrystalline ternary composition materials find application in tunable detectors and in other optoelectronic devices. Our results regarding the Structural properties of the ternary alloys are found to be in reasonable agreement with the experimental data. SUMMARY: I have reviewed the available information about Lattice constant of structural parameters for 23 technologically important III–V Semi conductors Ternary Semi conductors. Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy. REFERENCES: 1)S. Adachi, GaAs and Related Materials: Bulk Semi conducting and Super lattice Properties (World Scientific, Singapore, 1994) 2)S. Adachi, Physical Properties of III–V Semiconductor Compounds: InP,InAs, GaAs, GaP, InGaAs, and InGaAsP ~Wiley, New York, 1992!. 3)Handbook Series on Semiconductor Parameters, edited by M. Levinshtein,S. Rumyantsev, and M. Shur ~World Scientific, Singapore, 1996!,Vols. 1 and 2. 4)O. Ambacher et al., J. Appl. Phys. 85, 3222 ~1999!. 5)G. Klimeck, R. C. Bowen, T. B. Boykin, and T. A. Cwik, Superlattices Microstruct. 27, 520 ~2000!. 6)M. L. Cohen and J. R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, Springer Series in Solid-State Sciences,edited by M. Cardona ~Springer, Berlin, 1988!, Vol. 75. 7)S. Tiwari, Compound Semiconductor Device Physics ~Academic, New York, 1992!. 8)S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, J. Appl. Phys. 87, 965 ~2000!. 9)A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, Phys.Rev. B 62, 7365 ~2000!. 10)D. Xu, H. Yang, J. B. Li, D. G. Zhao, S. F. Li, S. M. Zhuang, R. H. Wu,Y. Chen, and G. H. Li, Appl. Phys. Lett. 76, 3025 ~2000!. 11)III–V Semiconductor Centre, University of Sheffield, UK ~private communication!. 12)Holloway. P. H . and MgGuire. G. E., Eds., Handbook of Compound Semiconductors. Noyes publ., 1995. 13)M. Sotoodeh, Ph.D. Dissertation, King’s College London, to be submitted,April 2000. 14)F. Fuchs, K. Khang, P. Koidl, and K. Schwarz, Phys. Rev. B 48, 7884 ~1993!. 15)Properties of Lattice-Matched and Strained Indium Gallium Arsenide,EMIS Datareviews Series No. 8, edited by P. Bhattacharya ~INSPEC,London, 1993!, pp. 103–105, 112. 16)25M. Levinshtein, S. Rumyantsev, and M. Shur, Handbook Series on Semiconductor Parameters, Vol. 1: Si, Ge, C (Diamond), GaAs, GaP, GaSb,InAs, InP, InSb ~World Scientific, Singapore, 1996!, pp. 84–86, 153–155,175–177. 17)S. Selberherr, Analysis and Simulation of Semiconductor Devices ~Springer, Wien, 1984!. 18)C. Algora and V. Diaz, Solid-State Electron. 41, 1787 ~1997!. 19)S. Selberherr, W. Hansch, M. Seavey, and J. Slotboom, Solid State Electron33, 1425 ~1990!. 20)P. A. Postigo, M. L. Dotor, P. Huertas, F. Garcia, D. Golmayo, and F.Briones, J. Appl. Phys. 85, 6567 ~1999!.
Related Articles -
Lattice constant, dopants, III-V Ternary Compounds,
| 
