Investigation of dependence of Composition and Refractive index on Electronic polarizabilities of III-V Ternary Semiconductors

Abstract: III-V Ternary Semi conductors have relation between refractive index, Composition and Electronic Polarizabilities. This is the first attempt to correlate refractive index and Composition with Electronic Polarizabilities.The theoretical results in Electronic Polarizabilities of III-V Ternary Semiconductors agree fairly well with experimental data. Refractive index data of semi conductors is the only one parameter required to estimate all the above parameters. Interesting relationships have been found between refractive index, plasmon energy, electronic Polarisability, bond length, micro hardness, bulk modulus, force constants and lattice energy.

Keywords: Refractive index, Composition, force constants, and Electronic Polarizabilities.

INTRODUCTION: 1) The evaluation of refractive indices of a semiconductor is of considerable importance for different applications, where the refractive index of the material is the key parameter for the device design. 2) Reddy, 3-5 et al have given a relationship between refractive index and bulk modulus, nuclear effective charge, micro hardness, optical electro negativity and electronic polarizabilities of semiconductor materials. And reported interesting relationships between the electronic Polarizabilities, lattice energy and plasmon energy. 3) Ravindra and Srivastava 8 have derived a relationship similar to that of Clausius-Mossotti in which plasmon energy is involved. Replacing plasmon energy with the above relation, one may get the electronic polarizabilities. 4) Doping of solute composition in III-V Ternary Semi conductors yields transparent conductive coatings. 5) Electronic Polarizabilities is related to Electrical property of Physical properties in III-V Ternary Semi conductors. 6) In this paper, a number of equations have been proposed to estimate Electronic Polarizabilities for III-V Ternary semiconductors. 7) An analysis of Electronic Polarizabilities was applied to 24 different III-V ternary alloy semiconductors. 8) The Electrical properties of III-V Ternary Semi conductor nano structures are self-formed in inverted tetrahedral pyramids. 9) Most of the correlations discussed are directly linked with plasmon energy. 10) In this paper, a number of equations have been proposed to estimate Electronic Polarizabilities for III-V Ternary semiconductors.

Objective: The main objective of this paper is to show variation of Electronic Polarizabilities (U12) with composition (x) in 24 III-V Ternary Semi conducting Compounds.

Purpose: The purpose of study is effect of composition in Electronic Polarizabilities of 24 III-V Ternary Semi conducting Compounds to represent additivity principle even in very low composition range.

Theoretical Impact: Electronic Polarizabilities of Ternary Compounds: FORMULA: ae12= ae1(x)+ ae2(1-x) where: ae1= Electronic Polarizabilities of first Binary Compound ae2= Electronic Polarizabilities of Second Binary Compound 1) AlxGa1-xAs Compound AlxGa1-xAs=AlAs+GaAs x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 8.02 7.96 7.93 7.9 7.87 7.84 7.81 7.78 7.75 7.72

Compound AlxGa1-xAs x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 7.69 7.66 7.63 7.6 7.57 7.54 7.51 7.48 7.45 7.42

2) InxGa1-xAs Compound InxGa1-xAs = InAs + GaAs x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 8.02 8.24 8.35 8.46 8.57 8.68 8.79 8.9 9.01 9.12

Compound InxGa1-xAs x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 9.225 9.334 9.444 9.553 9.663 9.772 9.882 9.991 10.1 10.21

3) InxGa1-xP Compound InxGa1-xP = InP + GaP x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 6.49 6.71 6.81 6.92 7.03 7.14 7.24 7.35 7.46 7.57

Compound InxGa1-xP x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 7.673 7.78 7.888 7.995 8.103 8.21 8.318 8.425 8.533 8.64

4) AlxIn1-xAs Compound AlxIn1-xAs = AlAs + InAs x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 10.2 9.93 9.79 9.65 9.51 9.37 9.23 9.09 8.95 8.82

compound AlxIn1-xAs x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 8.676 8.536 8.397 8.257 8.118 7.978 7.839 7.699 7.56 7.42

5) AlxIn1-x Sb Compound AlxIn1-x Sb = AlSb + InSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 13.2 12.9 12.7 12.6 12.4 12.3 12.1 12 11.8 11.7

Compound AlxIn1-x Sb x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 11.54 11.39 11.24 11.09 10.94 10.79 10.64 10.49 10.34 10.19

6) GaAsxP1-x Compound GaAsxP1-x=GaAs+GaP x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 6.49 6.64 6.72 6.8 6.87 6.95 7.03 7.1 7.18 7.26

Compound GaAsxP1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 7.332 7.408 7.485 7.561 7.638 7.714 7.791 7.867 7.944 8.02

7) AlxGa1-x P Compound AlxGa1-x P = AlP + GaP x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 6.49 6.46 6.45 6.43 6.42 6.41 6.39 6.38 6.36 6.35

Compound AlxGa1-x P x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 6.336 6.322 6.308 6.294 6.28 6.266 6.252 6.238 6.224 6.21

8) InAsxSb1-x Compound InAsxSb1-x = InAs + InSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 13.2 12.9 12.8 12.6 12.5 12.3 12.2 12 11.9 11.7

Compound InAsxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 11.56 11.41 11.26 11.11 10.96 10.81 10.66 10.51 10.36 10.21

9) InxGa1-x Sb Compound InxGa1-x Sb = InSb + GaSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 10.8 11 11.2 11.3 11.4 11.5 11.6 11.8 11.9 12

Compound InxGa1-x Sb x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 12.12 12.24 12.36 12.48 12.6 12.72 12.84 12.96 13.08 13.2

10) AlxIn1-x P Compound AlxIn1-x P = AlP + InP x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 8.64 8.4 8.28 8.15 8.03 7.91 7.79 7.67 7.55 7.43

Compound AlxIn1-x P x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 7.304 7.182 7.061 6.939 6.818 6.696 6.575 6.453 6.332 6.21

11) AlxGa1-x Sb Compound AlxGa1-x Sb = AlSb + GaSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 10.8 10.7 10.7 10.7 10.6 10.6 10.6 10.6 10.5 10.5

Compound AlxGa1-x Sb x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 10.46 10.43 10.4 10.37 10.34 10.31 10.28 10.25 10.22 10.19

12) GaAsxSb1-x Compound GaAsxSb1-x = GaAs + GaSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 10.8 10.5 10.4 10.2 10.1 9.96 9.82 9.68 9.54 9.41

Compound GaAsxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 9.267 9.128 8.99 8.851 8.713 8.574 8.436 8.297 8.159 8.02

13) InPxAs1-x Compound InPxAs1-x = InP + InAs x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 10.2 10.1 9.97 9.9 9.82 9.74 9.66 9.58 9.5 9.43

Compound InPxAs1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 9.347 9.268 9.19 9.111 9.033 8.954 8.876 8.797 8.719 8.64

14) AlAsxSb1-x Compound AlAsxSb1-x = AlAs + AlSb x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 10.2 9.91 9.77 9.64 9.5 9.36 9.22 9.08 8.94 8.81

Compound AlAsxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 8.667 8.528 8.39 8.251 8.113 7.974 7.836 7.697 7.559 7.42

15) AlAsxP1-x Compound AlAsxP1-x = AlAs + AlP x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 6.21 6.33 6.39 6.45 6.51 6.57 6.63 6.69 6.75 6.82

Compound AlAsxP1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 6.876 6.936 6.997 7.057 7.118 7.178 7.239 7.299 7.36 7.42

16) GaPxSb1-x Compound GaPxSb1-x = GaP + GaSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 10.8 10.4 10.1 9.93 9.72 9.5 9.29 9.07 8.86 8.64

Compound GaPxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 8.425 8.21 7.995 7.78 7.565 7.35 7.135 6.92 6.705 6.49

17) InPxSb1-x Compound InPxSb1-x = InP + InSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 13.2 12.7 12.5 12.3 12.1 11.8 11.6 11.4 11.1 10.9

Compound InPxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 10.69 10.46 10.24 10.01 9.78 9.552 9.324 9.096 8.868 8.64

18) AlPxSb1-x Compound AlPxSb1-x = AlP + AlSb x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 10.2 9.79 9.59 9.39 9.2 9 8.8 8.6 8.4 8.2

Compound AlPxSb1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 8.001 7.802 7.603 7.404 7.205 7.006 6.807 6.608 6.409 6.21

19) GaPxN1-x Compound GaPxN1-x = GaP + GaN x value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 (ae12) 3.12 3.46 3.63 3.79 3.96 4.13 4.3 4.47 4.64 4.81

Compound GaPxN1-x x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 (ae12) 4.974 5.142 5.311 5.479 5.648 5.816 5.985 6.153 6.322 6.49

Variation of Electronic Polarizabilities (ae12) with composition (x) is given. It has been observed that (ae12)increase for some compounds and decreases for some compounds (x=0.0-1.0) with the increase of composition.

Future Plans: 1) Current data set to include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion:

This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of Dependence of Electronic Polarizabilities (ae12) in III-V Ternary Semiconductors On Refractive Indices and Composition. The semiconductors have been carried out because of computational complexities and difficulties associate with disorder in the alloys. Polycrystalline ternary composition materials find application in tunable detectors and in other optoelectronic devices. Our results regarding the Structural properties of the ternary alloys are found to be in reasonable agreement with the experimental data.

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

REFERENCES

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Contributors: 1) Dr R R Reddy obtained his PhD (Physics) from the S.V. University, Tirupati, in 1981. He joined Sri Krishnadevaraya University, Anantapur, in 1985 and is presently working as Associate Professor. He worked as CSIR postdoctoral fellow and CSIR pool Scientist and also guided Phil and PhD research scholars in the field of spectroscopy, solid state physics, chemical physics, polymer physics, optoelectronics and glasses. He Has published 130 research papers in national international journals and also presented 36 research papers in the conferences. He has undertaken nine research projects of ISRO and UGC. He is a member of the Lydian Science Congress Association, Laser Society of India, and a life member of ISTE, New Delhi.

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