Abstract: Characterization of Semiconductors is very important as an x of a constituent in the Semiconductor is going to have significant changes in calculating physical properties of ternary compounds. The subscript X refers to the alloy content or concentration of the material. The compositional dependence of physical properties with the % of the constituent exhibits linear variation. The Linear variation or the presence of nonlinear increments in the Physical property with the change in value of x, the % of the constituents is also a factor. In the large family of ternary compounds one could expect to find systematic trends for the various physical properties. For instance the geometrical arrangement of the atoms is in most ternaries, tetrahedral.
Keywords: Density; Refractive indices; Optical polarizabilities; composition; linear variation; III-V Ternary semiconductors
Introduction: 1) In this opening talk of the International Conference on Ternary Semi conducting Compounds I would like first to recall some historical steps in the growth of our knowledge of these materials. I will then discuss several points related with the physical properties of ternary compounds I will show that very simple questions have not yet received satisfactory answers and emphasize some problems, which remain unsolved.
2) The Leningrad group under the late Gory nova [5] made significant contribution to the field. This group was the first to observe optical nonlinear properties [6] And to demonstrate laser action in a ternary compound [7]. Bell Telephone Laboratories’ scientists have studied laser action in several ternary compounds.
3) Most of the ternary compounds have tetrahedral structures. Many of the tetrahedral compounds belong to the class of adamantine structures. An adamantine structure is a three dimensional tetrahedral structure. These include the normal tetrahedral structures and the bond defect tetrahedral structures described above. In adamantine there are no anion-anion bond and no cation-cation bond. Most of the ternary compounds are adamantine, tetrahedral coordinated.
4) Solid solutions of III-V ternary compounds are of considerable scientific interest owing to their manifold technological applications [1-5]. Thin films occupy a prominent place in basic research and solid-state technology as they can be used to prepare polycrystalline.
5) Semiconductors not only in chemically and structurally pure form but also with a controlled impurity [1-3]. III-V Ternary compounds and their alloys have a number of interesting physical properties as well as numerous potential applications [4-6]. The continuous variation of physical properties of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology.
6) In the present work, the solid solutions belonging to III-V Ternary compounds have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties of these materials.
7) Experimentally, reliable measurements exist for a number of lattice-matched III-V heterostructures. In the last few years no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds. The increasing interest is due to its extraordinary physical properties, which can be used in many new electronic and optoelectronic devices other than operating in the blue and ultraviolet spectral region. 8) Group III-V Ternary compounds are InxGa1-xAs (0 9) Ternary compounds are compounds that consist of more than two elements and by naming and writing the formulae for ternary compounds, we follow rules that are similar to binary compounds. 10) In this unit we will learn about the physical proprieties of Group III-V Ternary compounds. The III–V semiconductor alloys are promising candidates for Many device applications such as high-speed electronic and long wavelength photonic devices because their band gaps cover a wide spectral range [3,4]
Objective: The main objective of this paper is to show linearity of molecular weight (M12), density (r12), refractive indices (n12), polarizabilities (am12) and Energy gap (Eg) With concentration (x) in few III-V ternary Semiconductors
Purpose: The purpose of study is effect of concentration in physical properties of III-V ternary Semiconductors is to represent additivity principle even in very low concentration range. This paper includes few ternary semiconductors with physical properties like Molecular weight (M12), density (r12), refractive index (n12), polarizabilities (am12) and Energy gap (Eg) in composition range (0
Theoretical Impact: The physical properties of III-V ternary semiconductors are in additivity nature if dopant concentration is less than solvent concentration.
Compound:InxGa1-xAs = InAs + GaAsX value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 Molecular weight144.64 149.15 151.405 153.66 155.915 158.17 160.425 162.68 164.935 167.19 Density 5.306 5.3414 5.3591 5.3768 5.3945 5.4122 5.4299 5.4476 5.4653 5.483 Refractive index3.3 3.32 3.33 3.34 3.35 3.36 3.37 3.38 3.39 3.4 Polarizability 82.75 84.965 86.0725 87.18 88.2875 89.395 90.5025 91.61 92.7175 93.825
x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 Molecular weight169.445 171.7 173.955 176.21 178.465 180.72 182.975 185.23 187.485 189.74 Density 5.5007 5.5184 5.5361 5.5538 5.5715 5.5892 5.6069 5.6246 5.6423 5.66 Refractive index3.41 3.42 3.43 3.44 3.45 3.46 3.47 3.48 3.49 3.5 Polarizability 94.9325 96.04 97.1475 98.255 99.3625 100.47 101.5775,102.685,103.7925,104.9
Compound InxGa1-x N=InN+GaNx value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 Molecular weight83.73 88.24 90.495 92.75 95.005 97.26 99.515 101.77 104.025 106.28 Density 6.1 6.178 6.217 6.256 6.295 6.334 6.373 6.412 6.451 6.49 Refractive index2.77 2.802 2.818 2.834 2.85 2.866 2.882 2.898 2.914 2.93 Polarizability 37.49 39.229 40.0985 40.968 41.8375 42.707 43.5765 44.446 45.3155 46.185
x value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 Molecular weight108.535 110.79 113.045 115.3 117.555 119.81 122.065 124.32 126.575 128.83 Density 6.529 6.568 6.607 6.646 6.685 6.724 6.763 6.802 6.841 6.88 Refractive index2.946 2.962 2.978 2.994 3.01 3.026 3.042 3.058 3.074 3.09 Polarizability 47.0545 47.924 48.7935 49.663 50.5325 51.402 52.2715 53.141 54.0105 54.88
The composition range of physical properties like Density (r12), Refractive index (n12) of InxGa1-xAs (0
Future Plans: 1) Current data set to include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.
Conclusion:
This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications, limited theoretical work on effect of concentration in the Physical properties of InxGa1-xAs (0
Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitfull discussions with V.R Murthy
References:
[1] U.K. Mishra, J. Singh, Semiconductor Device Physics and Design, Springer, Dordrecht, 2008. [2] M. Othman, E. Kasap, N. Korozlu, J. Alloys Compd. (2009), [3] H. Toyota, T. Sasaki, Y. Jinbo, N. Uchitomi, J. Cryst. Growth 310 (2008) 78. Doi: 10.1016/j.jallcom.2009.12.109. [4] O. Ostinelli, G. Almuneau, W. Bächtold, Semicond. Sci. Technol. 21 (2006) 681. [5] M. Linnik, A. Christou, Physica B 318 (2002) 140 [6] Garima Jain, R. Kumar, Optical Materials 26(1), 27 (2004) [7] Sushi Kumar, Zishan H. Khan, M. A. Mazeed Khan, M.Hussain, Current Applied Physics, 5(6) 561(2005) [8] CRC Hand book of Physics and Chemistry76th edition, New York, (1995-2004) [9] H. Yamaguchi, S. Miyashita, Y. Hirayama, Appl. Surf. Sci. 237 (2004) 649 [10] M. Linnik, A. Christou, Physica B 318 (2002) 140. [11] F. El Haj Hassan, H. Akdarzadeh, Mater. Sci. Eng. B 121 (2005) 170. [12] Murthy, V. and Satyalatha, K.C Extension of Principle of Additivity and Refractive indices of Ternary Compounds-National seminar on Solid state Spectroscopy, SV University, Tirupati, August 2001- Communicated to Asian Journal of Science and Technology for Development. [13] Handbook of optical constants of solids, Naval Research Laboratory. [14] S. Seghaier, N. Kamoun, R. Brini, A. B. Amara, Materials, Chemistry and Physics 97(1), 71 (2006). [15] Handbook of physico chemical properties of elements, Ed. G.V. Samsonov, IFI/Plenum, London, (1968). [16] E. Francisco, M.A. Blanco, G. Sanjurjo, Phys. Rev. B 63 (2001) 094107. [17] K. Schwarz, P. Blaha, G.K.H. Madsen, Comput. Phys. Commun. 147 (2002) 71. Journal of Alloys and Compounds 499 (2010) 80–89. [18] U.K. Mishra, J. Singh, Semiconductor Device Physics and Design, Springer, Dordrecht, 2008. [19] M. Othman, E. Kasap, N. Korozlu, J. Alloys Compd. (2009), doi: 10.1016/j.jallcom.2009.12.109. [20] Z. Wu, R.E. Cohen, Phys. Rev. B 73 (2006) 235116.
