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Generally, to fabricate various silicon devices, there has been widely used CZ silicon wafers which is manufactured by pulling up a silicon single crystal ingot from a silicon melt within a quartz crucible by a CZ method.In such a CZ wafer, excessive oxygen atoms eluted from the quartz crucible are interstitially caught in the silicon single crystal ingot, and the higher concentration of such interstitial oxygen atoms leads to, for example, oxygen precipitation from the silicon wafer, deterioration of a gate oxide film in a semiconductor integrated circuit, and an increase of a p-n junction leakage current. As such, upon forming semiconductor integrated circuits on the principal plane of the CZ wafer, there are reduced oxygen precipitations near the surface of the wafer by lowering the oxygen concentration of the silicon wafer supplier .
To this end, in the first aspect of the present invention, a silicon wafer is free of vacancy agglomerates and interstitial agglomerates, wherein the silicon wafer has a defect density of an oxide film of 0.1 piece/cm 2 or less, when the oxide film having a thickness of 5 to 25 nm is formed on the surface of the wafer and a DC voltage of 10 MV/cm is applied via the oxide film for 100 seconds, and wherein the silicon wafer manufacturer has an in-plane dispersion of 20% or less of a p-n junction leakage current in a p-n junction area of 1 mm 2 or more of a p-n junction portion when the p-n junction portions are formed on the surface of the wafer. source:news chinasun-solar
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