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To this end, in the first aspect of the present invention, a silicon wafer is free of vacancy agglomerates and interstitial agglomerates, wherein the silicon wafer has a defect density of an oxide film of 0.1 piece/cm 2 or less, when the oxide film having a thickness of 5 to 25 nm is formed on the surface of the wafer and a DC voltage of 10 MV/cm is applied via the oxide film for 100 seconds, and wherein the silicon wafer manufacturer has an in-plane dispersion of 20% or less of a p-n junction leakage current in a p-n junction area of 1 mm 2 or more of a p-n junction portion when the p-n junction portions are formed on the surface of the wafer. Further, in the second aspect of the present invention, a silicon wafer is free of vacancy agglomerates and interstitial agglomerates, wherein the silicon wafer china has a defect density of an oxide film of 0.1 piece/cm 2 or less, when the oxide film having a thickness of 5 to 25 nm is formed on the surface of the wafer and a DC voltage of 10 MV/cm is applied via the oxide film for 100 seconds, and wherein the silicon wafer has in-plane dispersions of 20% or less of both of: a recombination lifetime by a photo conductive decay method; and a generation lifetime measured by a MOS C-t method by forming a MOS capacitor. The present silicon wafers according to the first and second aspects satisfy these characteristics, to thereby guarantee characteristics of various semiconductor devices with higher reliability. Further, the absence of an epitaxial layer leads to the retention of the gettering ability. Source:news chinasun-solar
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