Investigation of AlxIn1-xP III-V Ternary Semiconductor Band Energy Gap

Abstract: AlxIn1-xP III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the AlxIn1-xP III-V Ternary Semiconductor Band Energy Gap values

Keywords: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical polarizability.

Introduction: 1) In this opening talk of AlxIn1-xP III-V Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg 2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties. 3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology. 4) In the present work, the solid solutions belonging to AlxIn1-xP III-V Ternary Semiconductor Band Energy Gap have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro Negativity of these materials. 5) Recently no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds. 6) Doping of Al component in a Binary semiconductor like InP and changing the composition of do pant has actually resulted in lowering of Band Energy Gap. 7) Thus effect of do pant increases the conductivity and decreases the Band Energy Gap and finds extensive applications 8) The present investigation relates Band Energy Gap and Electro Negativity with variation of composition for AlxIn1-xP III-V Ternary Semiconductor. 9) The fair agreement between calculated and reported values of Band Energy Gaps of AlP and InP Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors. 10) The present work opens new line of approach to Band Energy Gap studies in AlxIn1-xP III-V Ternary Semiconductor

Objective: The main Objective of this paper is to calculate AlxIn1-xP III-V Ternary Semiconductor Band Energy Gap values

Purpose: The purpose of study is AlxIn1-xP III-V Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of III-V Ternary Semiconductors to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of III-V ternary semiconductors and Band Energy Gap values in composition range (0 Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1+2*f12)]POWER (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12 Electro Negativity values of Elemental Semiconductors:

Compound Al Ga As In P Sb N E.N value 1.5 1.8 2 1.7 2.1 1.9 3

Electro Negativity values of AlxIn1-xP III-V Ternary Semiconductor

X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound AlxIn1-xP XM value 1.7 1.678855 1.668381 1.657973 1.647629 1.63735 1.627136 1.616984 1.606897 1.596872 XN value 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 (XM/XN)2 0.655329 0.639128 0.631178 0.623327 0.615574 0.607918 0.600356 0.592889 0.585514 0.578231

(XM-XN)2 0.16 0.177363 0.186295 0.195388 0.204639 0.214045 0.223601 0.233304 0.243151 0.253138 2(XM-XN)2 1.117287 1.130815 1.137838 1.145032 1.152398 1.159936 1.167644 1.175524 1.183575 1.191796 (2(XM-XN)2)1/4 1.028114 1.031212 1.032809 1.034438 1.036098 1.037788 1.039508 1.041257 1.043035 1.044842 28.8/(2(XM-XN)2)1/4 28.01246 27.9283 27.88511 27.84121 27.79661 27.75134 27.70543 27.65888 27.61173 27.56398

ALPHA-M 90.34 87.881 86.6515 85.422 84.1925 82.963 81.7335 80.504 79.2745 78.045 RO-VALUES 4.79 4.553 4.4345 4.316 4.1975 4.079 3.9605 3.842 3.7235 3.605 M-VALUES 145.79 137.006 132.614 128.222 128.83 119.438 115.046 110.654 106.262 101.87

ALPHA-M*RO/M 2.968164 2.920472 2.897553 2.875336 2.743135 2.83332 2.813705 2.795167 2.777838 2.761875 TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 7.48E+24 7.36E+24 7.31E+24 7.25E+24 6.92E+24 7.14E+24 7.1E+24 7.05E+24 7E+24 6.96E+24 1-(4PIN/3)*ALPHAM*RO/M 7.48E+24 7.36E+24 7.31E+24 7.25E+24 6.92E+24 7.14E+24 7.1E+24 7.05E+24 7E+24 6.96E+24

1+2*(4PIN/3)*ALPHAM*RO/M 1.5E+25 1.47E+25 1.46E+25 1.45E+25 1.38E+25 1.43E+25 1.42E+25 1.41E+25 1.4E+25 1.39E+25 1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.00623 13.96415 13.94256 13.9206 13.89831 13.87567 13.85271 13.82944 13.80586 13.78199

Eg value 5.639198 5.392755 5.275747 5.162658 5.053332 4.947619 4.845375 4.746463 4.650753 4.558121

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0

Compound XM value 1.58691 1.57701 1.567171 1.557394 1.547678 1.538023 1.528428 1.518892 1.509417 1.5 XN value 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 XM/XN 0.755671 0.750957 0.746272 0.741616 0.73699 0.732392 0.727823 0.723282 0.71877 0.714286 (XM/XN)2 0.571039 0.563936 0.556922 0.549995 0.543154 0.536398 0.529726 0.523137 0.51663 0.510204 XM-XN -0.51309 -0.52299 -0.53283 -0.54261 -0.55232 -0.56198 -0.57157 -0.58111 -0.59058 -0.6 (XM-XN)2 0.263262 0.273519 0.283907 0.294421 0.305059 0.315818 0.326695 0.337686 0.348789 0.36 2(XM-XN)2 1.200189 1.208753 1.217487 1.226393 1.235469 1.244717 1.254137 1.263728 1.273491 1.283426 (2(XM-XN)2)1/4 1.046676 1.048538 1.050428 1.052343 1.054285 1.056252 1.058245 1.060263 1.062304 1.06437 28.8/(2(XM-XN)2)1/4 27.51567 27.4668 27.41741 27.3675 27.31709 27.26621 27.21487 27.16308 27.11087 27.05826 ALPHA-M 76.8155 75.586 74.3565 73.127 71.8975 70.668 69.43 68.2 66.9795 65.75 RO-VALUES 3.4865 3.368 3.2495 3.131 3.0125 2.894 2.7755 2.657 2.5385 2.42 M-VALUES 97.478 93.086 88.694 84.302 79.91 75.518 71.126 66.734 62.342 57.95 ALPHA-M *RO 267.8172 254.5736 241.6214 228.9606 216.5912 204.5132 192.703 181.2074 170.0275 159.115 ALPHA-M*RO/M 2.747463 2.734822 2.724214 2.715957 2.710439 2.708138 2.709318 2.715368 2.727334 2.745729 4*PI*N VALUES 75.64888 75.64888 75.64888 75.64888 75.64888 75.64888 75.64888 75.64888 75.64888 75.64888 10 POWER23 1.00E+23 1.00E+23 1.00E+23 1.00E+23 1.00E+23 1.00E+23 1.00E+23 1.00E+23 1.00E+23 1.00E+23 TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 6.93E+24 6.9E+24 6.87E+24 6.85E+24 6.83E+24 6.83E+24 6.83E+24 6.85E+24 6.88E+24 6.92E+24 #VALUE! 6.93E+24 6.9E+24 6.87E+24 6.85E+24 6.83E+24 6.83E+24 6.83E+24 6.85E+24 6.88E+24 6.92E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.39E+25 1.38E+25 1.37E+25 1.37E+25 1.37E+25 1.37E+25 1.37E+25 1.37E+25 1.38E+25 1.38E+25 1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 13.75783 13.7334 13.7087 13.68375 13.65855 13.63311 13.60743 13.58154 13.55544 13.52913 Eg value 4.468447 4.381617 4.297523 4.21606 4.13713 4.060637 3.98649 3.914602 3.84489 3.777274

Doping of Al component in a Binary semiconductor like InP and changing the composition of do pant has actually resulted in lowering of Band Energy Gap. Future Plans: 1) Current data set of Electro Negativity values of AlxIn1-xP III-V Ternary Semiconductors and Band Energy Gap values include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance. Conclusion:

1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications. 2) Limited theoretical work on Electro Negativity values and Band Energy Gap of AlxIn1-xP III-V Ternary Semiconductors with in the Composition range of (0 Results and Discussion: Electro Negativity values of Ternary Semiconductors are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors and Band Energy Gap is used for Electrical conduction of semiconductors. This phenomenon is used in Band Gap Engineering. Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

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